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Kingston KVR16LR11S8K4/16 16GB DDR3-1600MHz PC3-12800 CL11, Single Rank, X8, 1.35V Memory RAM
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Images shown for reference only
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| Shipping Extra
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ATACOM Part #: MEE3_KING_A2_PI
Manufacturer Part #:KVR16LR11S8K4/16 |
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Price: $247.95
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| General Specifications | | Brand | Kingston |
| Model |
KVR16LR11S8K4/16 |
| Type |
Memory Module |
| Technical Specifications |
| CL(IDD) |
11 cycles |
| Row Cycle Time (tRCmin) |
48.125ns (min.) |
| Refresh to Active/Refresh Command Time (tRFCmin) |
260ns (min.) |
| Row Active Time (tRASmin) |
35ns (min.) |
| Maximum Operating Power @1.35V |
(1.35V) = TBD W
(per module) |
| UL Rating |
94 V - 0 |
| Operating Temperature |
0C to 85C |
| Storage Temperature |
-55
C to +100C |
| Features |
• JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~
1.575V) Power Supply
• VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
• 800MHz fCK for 1600Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 11, 10, 9, 8, 7, 6
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address "000" only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• On-DIMM thermal sensor (Grade B)
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB : Height 1.180" (30.00mm), double sided component |
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| Kingston KVR16LR11S8K4/16 16GB DDR3-1600MHz PC3-12800 CL11, Single Rank, X8, 1.35V Memory RAM |
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