Interface PCI-Express 4.0x4, NVMe 1.3

	Form Factor M.2 2280

	Total Capacity 1000GB

	NAND 3D TLC Toshiba BiCS4

	External DDR Cache DDR4 1GB

	Sequential Read speed Up to 5000 MB/s

	Sequential Write speed Up to 4400 MB/s

	Random Read IOPS up to 750k

	Random Write IOPS up to 700k

	Mean time between failure (MTBF) 1.77 million hours

	Power Consumption (Active) Average: R : 6.6W, W : 6.4W

	Power Consumption (Idle) 18.8mw

	Temperature (Operating) 0oC to 70oC

	Temperature (Storage) -40oC to 85oC

Note Test system configuration: configuration may vary by models, we will choose the latest platform for verification. Performance may vary based on SSDs firmware version and system hardware configuration. Sequential performance measurements based on CrystalDiskMark v.5.1.2 and I0meter 1.1.0. Speeds based on internal testing. Actual performance may vary. TBW (Terabyte Written):Terabytes Written" is the total amount of data that can be written into an SSD before it is likely to fail. 1GB is equal to 1 billion bytes. Actual useable capacity may vary.

	Item Dimension (L"xW"xH") 6 x 4 x 2 Weight 1.00 LB Warranty Information 3 years