Nytro 3530 - Light Endurance 800GB1 Standard Model XS800LE10003 Interface Dual 12Gb/s SAS NAND Flash Type 3D eMLC Form Factor 2.5 in x 15mm

	Performance at Max Power Limit Sequential Read (MB/s) Sustained, 64KB3,4 2100 Sequential Write (MB/s) Sustained, 64KB3,4 1710 Random Read (IOPS) Sustained, 4KB3,4 400,000 Random Write (IOPS) Sustained, 4KB3,4 95,000 Random 30% Write (IOPS) Sustained, 4KB3,4 250,000

	Performance at 9W Power Limit Sequential Read (MB/s) Sustained, 64KB3,4 2100 Sequential Write (MB/s) Sustained, 64KB3,4 1260 Random Read (IOPS) Sustained, 4KB3,4 375,000 Random Write (IOPS) Sustained, 4KB3,4 95,000 Random 30% Write (IOPS) Sustained, 4KB3,4 225,000 Average Latency (microseconds)3 85

	Endurance/Reliability Lifetime Endurance (Drive Writes per Day) 3 Nonrecoverable Read Errors per Bits Read 1 per 10E18 Annualized Failure Rate (AFR) 0.35%

	Power Management +5/+12V Max Start Current (A) 0.44/0.41 Average Sleep Power (W) 2.5 Configurable Power Limit Settings (W) 7 to 14 Average Idle Power (W) 3

	Environmental Temperature, Operating Internal (oC) 0 to 70 Temperature, Nonoperating (oC) -40 to 75 Temperature Change Rate/Hr, Max (oC) 20 Relative Humidity, Noncondensing (%) 5 to 95 Shock, 0.5ms (Gs) 1000 Vibration, 10Hz to 500Hz (Grms) 1.98

Note 1. One gigabyte, or GB, equals one billion bytes and one terabyte, or TB, equals one trillion bytes when referring to drive capacity. 3. Dual-port performance. All performance measured at queue depth of 32 per PHY at beginning of life. System application performance may vary based on SAS host and prior system workload. 4. Single-port performance: 1100MB/s of 64KB sequential reads and writes, 225,000 IOPS of 4KB random reads and writes

	Item Dimension(L inchxW inchxH inch) 5 x 3 x 1 Weight 1.00lb Warranty Information 5 Years